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| March 2003 FDS4770 FDS4770 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features * 13.2 A, 40 V. RDS(ON) = 10.5 m @ VGS = 10 V * Low gate charge (30 nC) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * DC/DC converter D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G SG S S SS S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 40 20 (Note 1a) Units V V A W 13.2 45 2.5 1.4 1.2 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 C/W C/W C/W Package Marking and Ordering Information Device Marking FDS4770 Device FDS4770 Reel Size 13'' Tape width 11mm Quantity 2500 units 2003 Fairchild Semiconductor Corporation FDS4770 Rev B (W) FDS4770 Electrical Characteristics Symbol EAS IAS TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD=20V, ID=13.2A Min Typ Max Units 370 13.2 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) ID = 250 A VGS = 0 V, ID = 250 A, Referenced to 25C VDS = 32 V, VGS = 20 V, VGS = 0 V VDS = 0 V 40 42 1 100 -100 V mV/C A nA nA VGS = -20 V, VDS = 0 V ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 13.2 A VGS = 10 V,ID = 13.2 A, TJ=115C VGS = 10 V, VDS = 10 V, VDS = 5 V ID = 13.2 A 30 45 On Characteristics VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance 2 3.9 -8 6 9 5 V mV/C 7.5 10 m A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 20 V, f = 1.0 MHz V GS = 0 V, 2819 600 291 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 20 V, ID = 1 A, VGS = 10 V, RGEN = 6 16 12 41 29 29 22 66 46 67 ns ns ns ns nC nC nC VDS = 20 V, VGS = 10 V ID = 13.2 A, 47 15 14 FDS4770 Rev B (W) FDS4770 Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 2.1 A V nS nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2) Voltage Diode Reverse Recovery Time IF = 13.2 A, diF/dt = 100 A/s Diode Reverse Recovery Charge 0.7 32 39 1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when 2 mounted on a 1in pad of 2 oz copper b) 105C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS4770 Rev B (W) FDS4770 Typical Characteristics 80 70 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0V 5.5V 1.8 1.6 1.4 1.2 1 0.8 0 20 40 ID, DRAIN CURRENT (A) 60 80 5.5V 6.0V 7.0V 8.0V VGS = 5.0V ID, DRAIN CURRENT (A) 60 50 40 30 5.0V 4.5V 20 10 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.019 RDS(ON), ON-RESISTANCE (OHM) 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o ID = 13.2A VGS = 10V ID = 6.6A 0.016 0.013 TA = 125oC 0.01 0.007 TA = 25oC 0.004 125 150 175 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 90 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 75 ID, DRAIN CURRENT (A) VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 60 45 TA = 125oC 30 25oC 15 -55oC 0 2.5 3.5 4.5 5.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4770 Rev B (W) FDS4770 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13.2 A 8 VDS = 10V 20V 4000 f = 1 MHz VGS = 0 V 3200 CAPACITANCE (pF) 30V CISS 2400 6 4 1600 COSS 800 2 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 1ms 10ms 100ms 1s 10s 1 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 0.01 0.01 DC P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 100s ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 20 0.1 10 0.1 1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 125 C/W P(pk) t1 t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4770 Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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